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Single Crystal Square Sapphire Substrate ( C-plane , SSP )10x10 mm Single Side Polished

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Single Crystal Square Sapphire Substrate ( C-plane , SSP )10x10 mm Single Side Polished

Name: Single Crystal Square Sapphire Substrate Cplane SSP 10x10 mm Single Side Polished
Brand: ZMSH
Price: 1 USD

China Single Crystal Square Sapphire Substrate ( C-plane , SSP )10x10 mm Single Side Polished wholesale

Brand Name : ZMSH

Place of Origin : SHANGHAI

MOQ : 10

Payment Terms : T/T

Delivery Time : 2-4 Weeks

Material : High Purity >99.99%, Single Crystal Al₂O₃

Dimension : 10 × 10 mm

Thickness : 1 mm (other thicknesses available upon request)

Orientation : C-plane (0001) to M (1-100) 0.2° ± 0.1° off

Lattice Parameter : a = 4.785 Å, c = 12.991 Å

Density : 3.98 g/cm³

Thermal Expansion Coefficient : 6.66×10⁻⁶ /°C (‖C-axis), 5×10⁻⁶ /°C (⊥C-axis)

Dielectric Strength : 4.8×10⁵ V/cm

Dielectric Constant : 11.5 (‖C-axis), 9.3 (⊥C-axis) @ 1 MHz

Dielectric Loss Tangent : < 1×10⁻⁴

Thermal Conductivity : 40 W/(m·K) at 20°C

Polishing : Single side polished (SSP), Ra < 0.3 nm (AFM); backside fine-ground Ra = 0.8–1.2 μm

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Single Crystal Square Sapphire Substrate (C-plane, SSP)10x10 mm Single Side Polished

Square Sapphire Substrate (SSP) Product Description

The Square Sapphire Substrate (SSP) is made from high-purity (>99.99%) single crystal Al₂O₃, offering excellent mechanical strength, thermal stability, and optical transparency. With C-plane (0001) orientation and single-side polished (SSP) surface, it is ideal for epitaxial growth, GaN-based LED production, optical components, and high-temperature or vacuum applications.

Square Sapphire Substrate (SSP) Key Specifications

Parameter	Specification
Material	High Purity >99.99%, Single Crystal Al₂O₃
Dimension	10 × 10 mm
Thickness	1 mm (other thicknesses available upon request)
Orientation	C-plane (0001) to M (1-100) 0.2° ± 0.1° off
Lattice Parameter	a = 4.785 Å, c = 12.991 Å
Density	3.98 g/cm³
Thermal Expansion Coefficient	6.66×10⁻⁶ /°C (‖C-axis), 5×10⁻⁶ /°C (⊥C-axis)
Dielectric Strength	4.8×10⁵ V/cm
Dielectric Constant	11.5 (‖C-axis), 9.3 (⊥C-axis) @ 1 MHz
Dielectric Loss Tangent	< 1×10⁻⁴
Thermal Conductivity	40 W/(m·K) at 20°C
Polishing	Single side polished (SSP), Ra < 0.3 nm (AFM); backside fine-ground Ra = 0.8–1.2 μm

Square Sapphire Substrate (SSP) Features & Benefits

Exceptional chemical and thermal stability
High optical transparency and surface flatness
Low dielectric loss and high thermal conductivity
Excellent mechanical hardness and scratch resistance
Available in custom sizes, orientations, and thicknesses

Square Sapphire Substrate (SSP) Applications

GaN and AlN epitaxial growth
LED and laser diode manufacturing
Optical and infrared windows
High-power RF and microwave devices
Research and semiconductor testing

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